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Type Designator: C103
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 0.25 W
Maximum Collector-Emitter Voltage |Vce|: 6 V
Maximum Collector Current |Ic max|: 0.05 A
Max. Operating Junction Temperature (Tj): 175 °C
Transition Frequency (ft): 0.6 MHz
Collector Capacitance (Cc): 75 pF
Forward Current Transfer Ratio (hFE), MIN: 15
Noise Figure, dB: -
Package: TO5
C103 Transistor Equivalent Substitute - Cross-Reference Search
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C103 Datasheet (PDF)
0.1. dmc1030ufdb.pdf Size:347K _diodes
DMC1030UFDBCOMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features ID MAX Low On-ResistanceDevice V(BR)DSS RDS(ON) max TA = +25C Low Input Capacitance Low Profile, 0.6mm Max Height 34m @ VGS = 4.5V 5.1A ESD Protected Gate 40m @ VGS = 2.5V 4.7A Q1 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) N-Channel 50m @ VGS
0.2. 2sc1034.pdf Size:453K _sony
0.3. 2sc1030.pdf Size:44K _jmnic
Power Transistors www.jmnic.com 2SC1030 Silicon NPN Transistors 1B 2E 3C Features With TO-3 package Low frequency power amplifications Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage 150 V VCEO Collector to emitter voltage 80 V VEBO Emitter to base voltage 6 V IC Collector current-Continuous 6 A PD Total Power Dissipation@TC
0.4. mmbtrc101ss mmbtrc102ss mmbtrc103ss mmbtrc104ss mmbtrc105ss mmbtrc106ss.pdf Size:106K _diotec
MMBTRC101SS ... MMBTRC106SSMMBTRC101SS ... MMBTRC106SSSurface Mount Bias Resistor TransistorsNPN NPNSMD Transistoren mit EingangsspannungsteilerVersion 2011-02-10Power dissipation Verlustleistung 200 mW 0.11.1 2.9Plastic case SOT-230.4 3Kunststoffgehuse (TO-236)TypeWeight approx. Gewicht ca. 0.01 gCode1 2Plastic material has UL classification 94V-
0.5. 2sc1034.pdf Size:181K _inchange_semiconductor
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC1034DESCRIPTIONDC Current Gain -h = 4(Min)@ I = 0.75AFE CCollector-Emitter Sustaining Voltage-: V = 700V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for use in general purpose power amplifier andswitching applicationsABSOLUTE MAXIMUM
Persamaan Ic Mosfet Dan Screen
Datasheet: C1, C100, C1001, C1002, C1003, C1004, C101, C102, 2N5088, C106, C112, C1-12, C118, C119, C12-28, C1-28, C150.
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